Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/87429

TítuloFerroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films
Autor(es)Silva, José Pedro Basto
Sekhar, Koppole C.
Rodrigues, Sofia A. S.
Khodorov, Anatoli Anatolievich
Martin-Sanchez, Javier
Pereira, Mário
Gomes, M. J. M.
Palavras-chaveFilms
BaTiO3 and titanates
Ferroelectric properties
Fatigue
Polarization switching
BaTiO and titanates 3
Data2012
EditoraElsevier Science BV
RevistaCurrent Applied Physics
CitaçãoSilva, J. P. B., Sekhar, K. C., Rodrigues, S. A. S., Khodorov, A., Martín-Sanchez, J., Pereira, M., & Gomes, M. J. M. (2012, July). Ferroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films. Current Applied Physics. Elsevier BV. http://doi.org/10.1016/j.cap.2012.02.036
Resumo(s)The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films has been studied. The structural and morphological analysis revealed that the films had a well crystallized perovskite phase and grain size of about 30-40 nm. A well saturated P-E hysteresis loop was observed with a remnant polarization (Pr) approximate to 4.8 mu C/cm(2) and a coercive field approximate to 100 kV/cm at a frequency of 1 kHz. The P-r has been found to be decreased only 4.3% after passing 8.0 x 10(8) cycles. The analysis of switching response with nucleation limited switching model reveals that characteristic switching time (t(0)) variance is due to the random distribution of the local electric fields. The peak value of polarization current and t(0) exhibits exponential dependence on reciprocal of pulse amplitude. (C) 2012 Elsevier B. V. All rights reserved.
TipoArtigo
URIhttps://hdl.handle.net/1822/87429
DOI10.1016/j.cap.2012.02.036
ISSN1567-1739
Versão da editorahttps://www.sciencedirect.com/science/article/pii/S156717391200065X
Arbitragem científicayes
AcessoAcesso restrito UMinho
Aparece nas coleções:CDF - FMNC - Artigos/Papers (with refereeing)

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