Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/87428
Título: | Thickness-dependent microstructure, resistive switching, ferroelectric, and energy storage properties of pulsed laser deposited 0.85[0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3]-0.15SrTiO3 thin films |
Autor(es): | Tasneem, Muhassinah Monteiro, Carlos R.P. Kumar, N. S.Kiran Silva, José Pedro Basto Sekhar, K. C. Kamakshi, K. Pereira, Mário |
Palavras-chave: | BZCT-STO thin Films Energy storage performance Ferroelectric Interface layer Resistive switching Size effect |
Data: | 15-Jun-2023 |
Editora: | Elsevier 1 |
Revista: | Ceramics International |
Citação: | Tasneem, M., Monteiro, C. R. P., Kumar, N. S. K., Silva, J. P. B., Sekhar, K. C., Kamakshi, K., & Pereira, M. (2023, June). Thickness-dependent microstructure, resistive switching, ferroelectric, and energy storage properties of pulsed laser deposited 0.85[0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3]-0.15SrTiO3 thin films. Ceramics International. Elsevier BV. http://doi.org/10.1016/j.ceramint.2023.03.207 |
Resumo(s): | In this work, we have studied the effect of thickness on structural, morphological, resistive switching (RS), ferroelectric, and energy storage properties of 0.85[0.6Ba (Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3]-0.15SrTiO3 (BZCT-STO) thin films deposited by the pulsed laser deposition technique. X-ray diffraction (XRD) analysis suggests that BZCT-STO thin films exhibit a polycrystalline tetragonal structure. The lattice parameters and tetragonality ratio approaching to bulk value with an increase of thickness, confirm strain relaxation in thicker films. SEM analysis reveals a dense columnar structure with a different grain size that varies from 3 nm to 60 nm as thickness increased from 160 to 360 nm. The P-E loops suggest that the relaxor behaviour increases with a decrease of thickness due to interface low dielectric layer, substrate clamping effect, small grain size, and high back switching ratio. The RS effect observed in Pt/BZCT-STO/Au capacitors is attributed to polarization modulation of the Schottky barrier and is found to be significant at low thickness. The effect of electric field and frequency on energy storage properties of BZCT-STO films is also investigated. The Pt/BZCT-STO/Au capacitor with a thickness of 160 nm exhibited 6.0 J/cm3 with an efficiency of 72% at a field of 800 kV/cm. It also exhibited a robust energy storage performance in the frequency range of 50–2000 Hz and also up to 108 cycles passing through the capacitor. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/87428 |
DOI: | 10.1016/j.ceramint.2023.03.207 |
ISSN: | 0272-8842 |
e-ISSN: | 1873-3956 |
Versão da editora: | https://www.sciencedirect.com/science/article/pii/S0272884223008076 |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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68-Ceramics International 49 (2023) 20756-20762.pdf | 4,43 MB | Adobe PDF | Ver/Abrir |
Este trabalho está licenciado sob uma Licença Creative Commons