Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/61375
Título: | ZnO:Cu thin films and p-n homojunctions grown by electrochemical deposition |
Autor(es): | Samantilleke, A. P. Sahal, M. Tortosa, M. Mollar, M. Mari, B. Cerqueira, M. F. Rebouta, L. Vasilevskiy, Mikhail |
Palavras-chave: | ZnO p-type electrodeposition |
Data: | 2011 |
Editora: | American Institute of Physics |
Revista: | AIP Conference Proceedings |
Resumo(s): | ZnO doped with Cu thin films were deposited on indium tin oxide coated glass substrates by electrodeposition using an electrolyte consisting of Cu and Zn perchlorates dissolved in dimethylsulfoxide. The Cu/Zn ratio measured in the thin films is about twice the Cu/Zn ratio present in the starting electrolyte. Irrespective of the Cu content, all the ZnO:Cu films exhibit a hexagonal wurtzite structure typical of ZnO with a preferential orientation along (002) direction. The p-type behaviour of ZnO:Cu films is inferred from the change in the sign of the photocurrent observed for Cu concentrations greater than 2%. Furthermore, a p-n homojunction with a rectifying factor 22 were prepared by electrodepositing of ZnO/ZnO:Cu layers. |
Tipo: | Artigo em ata de conferência |
URI: | https://hdl.handle.net/1822/61375 |
ISBN: | 9780735410022 |
DOI: | 10.1063/1.3666283 |
ISSN: | 0094-243X |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - GRF - Comunicações/Communications (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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11- ICPS 30 p 115_ZnO-Cu.pdf | 371 kB | Adobe PDF | Ver/Abrir |