Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

doi:10.1063/1.4915939

Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/39103

Título:	Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
Autor(es):	Oliveira, F. Fischer, I. A. Benedetti, A. Cerqueira, M. F. Vasilevskiy, Mikhail Stefanov, S. Chiussi, S. Schulze, J.
Palavras-chave:	Self-assembled GeSn dots Molecular beam epitaxy TEM&AFM Raman
Data:	2015
Editora:	AIP Publishing
Revista:	Journal of Applied Physics
Citação:	Oliveira, F., Fischer, I. A., Benedetti, A., Cerqueira, M. F., Vasilevskiy, M. I., Stefanov, S., . . . Schulze, J. (2015). Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis. Journal of Applied Physics, 117(12). doi: 10.1063/1.4915939
Resumo(s):	We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.
Tipo:	Artigo
URI:	https://hdl.handle.net/1822/39103
DOI:	10.1063/1.4915939
ISSN:	0021-8979
Versão da editora:	http://dx.doi.org/10.1063/1.4915939
Arbitragem científica:	yes
Acesso:	Acesso aberto
Aparece nas coleções:	CDF - CEP - Artigos/Papers (with refereeing)