Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/33632

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dc.contributor.authorBarradas, N. P.por
dc.contributor.authorAlves, E.por
dc.contributor.authorVieira, E. M. F.por
dc.contributor.authorParisini, A.por
dc.contributor.authorConde, O.por
dc.contributor.authorMartín-Sánchez, J.por
dc.contributor.authorRolo, Anabela G.por
dc.contributor.authorChahboun, A.por
dc.contributor.authorGomes, M. J. M.por
dc.date.accessioned2015-02-05T17:31:19Z-
dc.date.available2015-02-05T17:31:19Z-
dc.date.issued2014-
dc.identifier.citationBarradas, N. P., Alves, E., Vieira, E. M. F., Parisini, A., Conde, O., Martín-Sánchez, J., . . . Gomes, M. J. M. (2014). IBA study of SiGe/SiO2 nanostructured multilayers. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 331, 89-92.por
dc.identifier.issn0168-583Xpor
dc.identifier.urihttps://hdl.handle.net/1822/33632-
dc.description.abstractSiGe/SiO2 multilayers with layer thickness of 5 nm were deposited with RF magnetron sputtering. The as deposited samples had well defined SiGe amorphous layers. Different annealing treatments were made to promote the formation of SiGe nanocrystals. We report an ion beam analysis study with the Rutherford backscattering and elastic recoil analysis detection techniques, in order to determine the thickness and composition of the nanolayers, and gain insight into the evolution of the roughness of the layers. The results are correlated with other structural properties of the samples, as measured with complementary techniques such as grazing incidence X-ray diffraction annular dark field scanning transmission electron microscopy and high resolution transmission electron microscopy.por
dc.description.sponsorshipThis study has been partially funded by: (i) FEDER through the COMPETE Program and by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Project PTDC/FIS/70194/2006; (ii) European COST Actions MP0901-NanoTP and MP0903-NanoAlloy; (iii) the transnational access framework of the ANNA Eu Project (Contract No. 026134-RII3) through the funding of the ANNA_TA_UC9_RP006 proposal. E.M.F.V is grateful for financial support through the FCT and POPH grant SFRH/BD/45410/2008. J.M.S is grateful for financial support through the Spanish CSIC JAE-DOC-070/01 program co-funded by FSE. The authors acknowledge the Engineer Jose Santos for technical support at Thin Film Laboratory.por
dc.language.isoengpor
dc.publisherElsevier 1por
dc.rightsrestrictedAccesspor
dc.subjectIon beam analysispor
dc.subjectNanostructured multilayerspor
dc.subjectSiGe/SiO2por
dc.titleIBA study of SiGe/SiO2 nanostructured multilayerspor
dc.typearticlepor
dc.peerreviewedyespor
oaire.citationStartPage89por
oaire.citationEndPage92por
oaire.citationTitleNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atomspor
oaire.citationVolume331por
dc.identifier.doi10.1016/j.nimb.2013.11.025por
dc.subject.fosCiências Naturais::Ciências Físicaspor
dc.subject.wosScience & Technologypor
sdum.journalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atomspor
Aparece nas coleções:CDF - CEP - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

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