Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/16959
Título: | Annealing effect on the photoluminescence of ge-doped silica films |
Autor(es): | Rolo, Anabela G. Chahboun, A. Conde, O. Vasilevskiy, Mikhail Gomes, M. J. M. |
Palavras-chave: | Germanium Nanocrystals Photoluminescence Defects |
Data: | Jan-2008 |
Editora: | Elsevier 1 |
Revista: | Physica E |
Resumo(s): | SiO2 thin films doped with Ge nanocrystals (NCs) were grown using the RF-sputtering technique. X-ray diffraction studies revealed a diamond structure for Ge NCs. The presence of Ge NCs in the grown films was also confirmed by Raman spectroscopy. Photoluminescence spectroscopy of the samples revealed an emission band at 2.07 eV, which is tentatively attributed to defects located at the Ge-matrix interface. This was found to be quite sensitive to variations of local matrix composition, induced by the annealing process. |
Tipo: | Artigo |
Descrição: | The authors are grateful to Dr. L. Rebouta for the RBS studies and to Dr. G. Hungerford for his careful reading of the manuscript. |
URI: | https://hdl.handle.net/1822/16959 |
DOI: | 10.1016/j.physe.2007.09.144 |
ISSN: | 1386-9477 |
Versão da editora: | http://www.sciencedirect.com/science/article/pii/S1386947707005668 |
Arbitragem científica: | yes |
Acesso: | Acesso restrito UMinho |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
---|---|---|---|---|
Annealing effect on the photoluminescence of Ge-doped silica.pdf Acesso restrito! | 270,2 kB | Adobe PDF | Ver/Abrir |