Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/13618
Título: | Effect of the deposition rate on ITO thin films properties prepared by ion beam assisted deposition (IBAD) technique |
Autor(es): | Meng Lijian Teixeira, Vasco M. P. Santos, M. P. dos |
Palavras-chave: | Electrical properties Ion-assisted deposition structure Structure ITO Optical properties |
Data: | Jul-2010 |
Editora: | Wiley-VCH Verlag |
Revista: | physica status solidi (a) |
Resumo(s): | Indium tin oxide (ITO) thin films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique at different deposition rates (0.1 -- 0.3 nm/s). The effects of the deposition rate on the structural, optical and electrical properties of the deposited films have been studied. The optical constants of the deposited films were calculated by fitting the transmittance spectra using the semi-quantum model. Considering the application for the electromagnetic wave shielding which needs a high IR reflectance, the optimising deposition rate is 0.2 nm/s. The films prepared at this deposition rate shows a relative high IR reflectance (60%), a good electrical conductivity (5 x 10-3 -cm), and a reasonable transmittance in the visible region (over 80%). |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/13618 |
ISSN: | 1862-6300 |
Versão da editora: | http://onlinelibrary.wiley.com/doi/10.1002/pssa.v207:7/issuetoc |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - GRF - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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Paper71.pdf | Documento principal | 4,92 MB | Adobe PDF | Ver/Abrir |